High-Performance Solar-Blind Photodetectors Based on Al<tex>$_rm x$</tex>Ga<tex>$_1-rm x$</tex>N Heterostructures
نویسندگان
چکیده
منابع مشابه
High-speed solar-blind AlGaN-based metal–semiconductor–metal photodetectors
Solar-blind AlGaN metal–semiconductor–metal (MSM) photodetectors with fast pulse response have been demonstrated. The devices were fabricated on MOCVD-grown epitaxial Al0.38Ga0.62N layers, using a microwave compatible fabrication process. The photodiode samples exhibited low leakage with dark current densities below 1 × 10 A/cm at 40 V reverse bias. Photoconductive gain-assisted photoresponse w...
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Dedication To my parents, Gary and Carol, and to my loving girlfriend Connie. v Acknowledgements I would like to express my gratitude to my supervising, Professor Joe C. Campbell, for showing me the exciting world of nitride-based optoelectronic devices. His wise advice and constant support has been the most important aspect of my research, inspiring all of the work I have accomplished. Joe Cam...
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We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10(13) cm(-2) of 2-MeV proton fluences for AlN metal-semiconductor-metal ...
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ژورنال
عنوان ژورنال: IEEE Journal of Selected Topics in Quantum Electronics
سال: 2004
ISSN: 1077-260X
DOI: 10.1109/jstqe.2004.831681